With the development of electronic technology in the direction of high power, high density and integration, the maximum operating temperature and power density of power semiconductor devices continue to rise, while traditional IGBT modules are soldered with alloy solders such as Sn-Pb, which have low melting point and thermal conductivity. Poor performance, it is difficult to meet the requirements of high-power device packaging and its high-temperature applications. Nano sintered silver utilizes the small size effect of nano materials to reduce the melting point of bulk silver powder at 961°C to below 300°C. As a result, a high-melting point connection layer can be obtained under low temperature sintering conditions, and the excellent electrical conductivity of silver itself makes the heat dissipation capability and reliability of the connection layer greatly improved.
